Hybrid mirror structure for a visible emitting VCSEL

ABSTRACT

A hybrid mirror structure for a visible emitting VCSEL including a first distributed Bragg reflector disposed on a substrate and including first pairs of alternating layers including an oxidized aluminum material and second pairs of alternating layers. A first cladding region disposed on the first distributed Bragg reflector, an active region disposed on the first cladding region, and a second cladding region disposed on the active region, and a second distributed Bragg reflector disposed on the second cladding region. In the first distributed Bragg reflector, each pair of alternating layers includes a layer containing oxidized aluminum. Alternate layers contain AlAs which is oxidized to decrease the index of refraction to a range of approximately 1.3 to 1.7.

FIELD OF THE INVENTION

This invention relates, in general, to layered optical devices and, moreparticularly, to semiconductor lasers.

BACKGROUND OF THE INVENTION

At present, conventional edge emitting semiconductor lasers play asignificant role in optical communication due to their high operatingefficiency and modulation capabilities; however, the edge emittingsemiconductor lasers have several short comings or problems, thus makingthe edge emitting laser device difficult to use in several applications.

Recently, however, there has been an increased interest in verticalcavity surface emitting lasers (VCSEL)s. The conventional VCSEL hasseveral advantages, such as emitting light perpendicular to the surfaceof the die, and the possibility of fabrication of two dimensionalarrays. However, while conventional VCSELs have several advantages,conventional VCSELs have several disadvantages with regard to emissionin the visible spectrum primarily due to the poor reflectivity of thedistributed Bragg reflectors. Because of this, manufacturability ofVCSELs for the visible spectrum is severely limited.

Conventionally, reflectivity problems are solved by increasing thenumber of reflective elements or alternating layers that comprise theconventional distributed Bragg reflectors. However, in this case, thisapproach may not solve the reflectivity problems (due to increasedreflector losses and narrowing of the bandwidth of the reflector), butexacerbates several other problems, such as manufacturability, defectdensity, higher resistance and the like, thus making the conventionalapproach not a viable solution to the problem.

For example, in an attempt to increase reflectivity of Bragg reflectorsin the VCSEL, many additional alternating layers (e.g., as many as 50 to200 additional alternating layers) are deposited. However, increasingthe number of alternating layers increases the cost and complexity ofmanufacturing. More particularly, with the increased number ofalternating layers, an increase in defect density of the alternatinglayers may be produced, as well as an increase in the amount of timerequired to manufacture the layers. Also, the series resistanceincreases with increased alternating layers, potentially impacting thetemperature performance of the device. Thus, adding additional layers toa conventional VCSEL results in a substantial increase in the cost ofmanufacturing conventional VCSELs as well as a decrease in the qualityof the VCSELs manufactured, As a result, conventional VCSELs fabricatedin this fashion are generally not suitable for high volume manufacturingfor this purpose.

It can readily be seen that conventional edge emitting semiconductorlasers and conventional approaches to vertical cavity surface emittinglasers have several disadvantages and problems, thus not enabling theiruse in high volume manufacturing applications. Therefore, a VCSEL andmethod for making that simplifies the fabrication process, reduces cost,with an improved reliability of the VCSEL would be highly desirable.

BRIEF SUMMARY OF THE INVENTION

The above problems and others are at least partially solved and theobjects of this invention are realized in a hybrid mirror structure fora visible emitting vertical cavity surface emitting laser including afirst distributed Bragg reflector disposed on the surface of asupporting substrate and including first pairs of alternating layersformed of an oxidized aluminum material and second pairs of alternatinglayers, with the first pairs of alternating layers being positionedadjacent the supporting substrate and the second pairs of alternatinglayers being positioned on the first pairs of alternating layers. Afirst cladding region is disposed on the first distributed Braggreflector, an active region disposed on the first cladding region, and asecond cladding region disposed on the active region. A seconddistributed Bragg reflector is disposed on the second cladding region.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an enlarged simplified cross-sectional view of a VCSEL deviceprepared on a substrate in accordance with the present invention;

FIGS. 2 and 3 are simplified cross-sectional views illustratingdifferent steps in the fabrication of a VCSEL in accordance with thepresent invention; and

FIG. 4 is a simplified graphical illustration of reflectivity versuswavelength for the VCSEL of FIG. 1.

DETAILED DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a simplified enlarged vertical cavity surfaceemitting laser (VCSEL) 101 formed on a substrate 102 having surfaces 103and 104 with light 120 being emitted from VCSEL 101. It should beunderstood that while FIG. 1 only illustrates a single VCSEL 101, VCSEL101 may represent many VCSELs that are located on substrate 102 to formarrays. Generally, VCSEL 101 is made of several defined areas orregions, such as a distributed Bragg reflector 106 having a plurality ofalternating layers 108 illustrated by layers 111 and 113 and a pluralityof alternating layers 116 illustrated by layers 118 and 119, a claddingregion 123, an active region 126, a cladding region 128, a distributedBragg reflector 130 having a plurality of alternating layers 131illustrated by layers 133 and 135, and a contact region 140.

Substrate 102, in this example, is made of any suitable material, suchas gallium arsenide, silicon, or the like. Typically, substrate 102 ismade of gallium arsenide so as to facilitate epitaxial growth ofsubsequent multiple layers that comprise VCSEL 101.

Typically, any suitable epitaxial deposition method, such as molecularbeam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD), orthe like is used to deposit the required multiple layered structures,such as distributed Bragg reflector 106, having the plurality ofalternating layers 108 and the plurality of alternating layers 116,cladding region 123, active region 126, cladding region 128, distributedBragg reflector 130, and a contact region 140 for VCSEL 101. Also, itshould be understood that many of these layers are made of compoundsemiconductor materials, such as indium aluminum gallium phosphide,aluminum arsenide, gallium arsenide, aluminum gallium arsenide, aluminumgallium phosphide, indium aluminum phosphide, and the like. It should beunderstood that epitaxial deposition is used extensively to produce themultitude of layers that comprise the VCSEL 101.

Generally, thicknesses of the plurality of alternating layers 106, theplurality of alternating layers 130, cladding region 123, claddingregion 128, active region 126, and contact region 140 are set out asportions of a wavelength of light 120 being emitted by VCSEL 101. Forexample, with VCSEL 101 being designed to emit light 120 at 670nanometers, optical thickness of each alternating layer 133, and 135 isset at 167.5 nanometers, thereby making the thickness of eachalternating layer 133, and 135 one quarter of the wavelength of light120 being emitted from VCSEL 101. The plurality of alternating layers116 form a standard section of the lower Bragg reflector. The pluralityof alternating layers 108 form an additional section of the lower Braggreflector. One layer in each segment (pair) of alternating layers 108 isselectively oxidized (to be explained). The thickness of the oxidizedlayers is chosen such that it is one quarter wavelength after oxidation.Additionally, it should be understood that other thicknesses or portionsof the wavelength can be used such as, one half, three quarter, or anymultiple thereof.

Doping of VCSEL 101 is achieved by the addition of dopant materials,e.g., n-type dopants and p-type dopants to epitaxial materials used forepitaxial deposition, thereby doping the epitaxially deposited material.While many different dopant concentrations, specific dopant materials,and placement of dopant materials can be used, generally, alternatinglayers 116 of distributed Bragg reflector 106 are n-type doped withselenium, silicon, or the like to a concentration ranging from 1E15 to1E20 cm⁻³, with a preferred range from 1E17 to 1E19 cm⁻³, with a nominalrange from 5E17 to 1E18 cm⁻³, whereas distributed Bragg reflector 130 isp-type doped with carbon, zinc, or the like to a concentration rangingfrom 1E15 to 1E20 cm⁻³, with a preferred range from 1E17 to 1E19 cm⁻³,and a nominal range from 1E18 to 5E18 cm⁻³.

Distributed Bragg reflector 106 is made of the plurality of alternatinglayers 108 and the plurality of alternating layers 116. As statedearlier, the plurality of alternating layers 108 will be oxidized duringprocessing to form a highly reflective partial mirror. The plurality ofalternating layers 108 further include one or more layers of aluminumarsenide, illustrated by a layer 111, and one or more layers of aluminumgallium arsenide, illustrated by a layer 113. By way of example, withsubstrate 102 being gallium arsenide, layer 111 of aluminum arsenide(e.g., AlAs) is epitaxially deposited on surface 104 of substrate 102,with layer 113 of aluminum gallium arsenide (e.g., A1₀.5 Ga₀.5 As) beingsubsequently epitaxially deposited on layer 111, thereby making a mirrorpair or a pair of reflectors (e.g., AlAs/Al₀.5 Ga₀.5 As). If additionalmirror pairs are required, several more layers, i.e., additional mirrorpairs, are deposited on the existing layers 111 and 113.

Generally, alternating layers 108 can have from one pair to twenty pairof mirrors, with a preferred number of pairs ranging from three to tenpairs, and with a nominal number of pairs being four to six pairs.Additionally, applicant believes that five mirrored pairs of aluminumarsenide and aluminum gallium arsenide give an appropriate reflectivityperformance for VCSEL 101 operating in the visible spectrum onceoxidation has taken place in the fabrication sequence. However, itshould be understood that the number of alternating layers 111 and 113can be adjusted for specific applications. Also, it should be noted thatlayer 114 is made of aluminum arsenide and forms a top layer foralternating layers 108. It should be further understood that in theexamples where a percent composition of a particular element is given itshould be considered only as an example and that these variations fromthese examples can be large and are also part of the present invention.

For example, by selecting aluminum arsenide and aluminum galliumarsenide (AlAs/Al₀.5 Ga₀.5 As) as a material structure for distributedBragg reflector 106, the aluminum and the gallium of the aluminumgallium arsenide can be varied. Generally, the aluminum of the aluminumgallium arsenide can range from 0 percent to 100 percent, with apreferred range from 46 percent to 54 percent in Al₀.5 Ga₀.5 As

Once the plurality of alternating layers 108 have been deposited onsubstrate 102, the plurality of alternating layers 116 are epitaxiallydeposited on the plurality of alternating layers 108. Generally, theplurality of alternating layers 116 further include one or more layersof indium aluminum gallium phosphide, illustrated as a layer 118, andone or more layers of indium aluminum phosphide, illustrated by a layer119. By way of example, with substrate 102 being gallium arsenide, withthe plurality of alternating layers 106 being aluminum arsenide andaluminum gallium arsenide (e.g., AlAs/Al₀.5 Ga₀.5 As), respectively,layer 118 of indium aluminum gallium phosphide (e.g., In₀.49 Al₀.1Ga₀.41 P) is deposed on layer 114 with a subsequent layer 119 of indiumaluminum phosphide (e.g., In₀.49 Al₀.51 P) being deposited on the indiumaluminum gallium phosphide layer 118, thereby making another mirrorpair. Generally, the plurality of alternating layers 116 can range fromone pair to twenty pair of mirror pairs, with a preferred number ofpairs being from three to ten, and with a nominal number of pairs beingfour to six. It is believed that five mirrored pairs of indium aluminumgallium arsenide and indium aluminum phosphide, in conjunction with theplurality of alternating layers 108, give appropriate reflectivityperformance for VCSEL 101 operating in the visible spectrum. In additionto increasing the reflectivity of distributed Bragg reflector 106,alternating layers 116 provide an N-metal contact for VCSEL 101 andinhance the reliability of VCSEL 101 by including indium, which aids inpreventing the migration of dislocations and the like to active region126. However, it should be understood that the number of alternatinglayers 118 and 119 can be adjusted for specific applications.

It should be further understood that in the examples where a percentcomposition of a particular element is given it should be consider onlyas an example. It should be further understood that variation from theseexamples can be large and are also part of the present invention.

For example, reflectivity from the indium aluminum gallium phosphide canbe achieved by having a percent composition of indium ranging from 46percent to 54 percent. By varying the percent composition of indium, acorresponding variation in a percent composition of gallium occurs.Additionally, aluminum percent concentration can range from 1 percent to20 percent with a nominal range from 7 percent to 13 percent. It shouldbe pointed out that the percent composition of the aluminum reduces thepercent concentration of gallium, thereby producing a balancedcomposition.

For the sake of simplicity and to prevent overcrowding of the figure,cladding regions 123 and 128 are each shown as a single layer; however,it should be understood that each cladding region 123 and 128 can bemade of more than one layer epitaxially disposed or deposited on aprevious layer (e.g. Bragg reflector 106 and active region 126), withcladding layers 123 and 128 being made of any suitable doped or undopedmaterial such as undoped indium aluminum gallium phosphide epitaxiallydeposited. Also, active region 126 is represented by a single layerwhich is epitaxially deposited or disposed on cladding region 123;however, it should be understood that active region 126 can include oneor more quantum wells, etc.

Distributed Bragg reflector 130 is made of the plurality of alternatinglayers 131. The plurality of alternating layers 130 further include oneor more layers of aluminum arsenide, illustrated by a layer 133, and oneor more layers of aluminum gallium arsenide, illustrated by a layer 135.By way of example, a layer of aluminum arsenide (e.g., AlAs) isepitaxially deposited on cladding region 128, with a layer of aluminumgallium arsenide (e.g., Al₀.5 Ga₀.5 As) being subsequently epitaxiallydeposited on the layer of aluminum arsenide, thereby making anothermirror pair or another pair of reflectors (e.g., AlAs/Al₀.5 Ga₀.5 As).If additional mirror pairs are required, several more layers, i.e.,additionally mirror pairs are deposited on the existing layers ofaluminum arsenide and aluminum gallium arsenide.

Generally, the plurality of alternating layers 130 are from one pair tofifty mirror pairs, with a preferred number of mirror pairs ranging fromten to forty pairs, and with a nominal number of mirror pairs rangingfrom twenty to thirty mirrored pairs, and an optimum number of twentyeight mirror pairs. However, it should be understood that the number ofmirror pairs can be adjusted for specific applications.

A heavily doped contact layer 140 is formed on the upper surface ofdistributed Bragg reflector 130 and an electrical contact (not shown) isformed on layer 140 by disposing any suitable conductive material onlayer 140, such as indium tin oxide, gold, platinum, or the like. Itshould be understood that depending upon which material selection ismade the specific method of disposing and patterning of that specificmaterial will change to form contact layer 140 and the electricalcontact.

Turning now to FIGS. 2 and 3, some steps in a specific process for thefabrication of VCSEL 101 are illustrated. It will of course beunderstood that other methods might be utilized and the procedure to bedescribed is simply for purposes of example and explanation. Componentsof the structures in FIGS. 2 and 3 which are similar to componentspreviously illustrated and described in conjunction with FIG. 1 aredesignated with similar numbers.

Referring specifically to FIG. 2, substrate 102 is illustrated withfirst distributed Bragg reflector 106 deposited thereon. Cladding region123, active region 126 and cladding region 128 are deposited on theupper surface of distributed Bragg reflector 106 as previouslydescribed. Distributed Bragg reflector 130 is deposited on the uppersurface of cladding region 128. Here it should be noted that claddingregion 123, active region 126, cladding region 128 and distributed Braggreflector 130 are etched to define VCSEL 101 but the diameter is stillsubstantially larger than the operating cavity region so that activeregion 126 will not be damaged by this etching step.

Once the above described etching step is completed, a masking layer 150is deposited over the entire structure.

Masking layer 150 can be any material which is sufficiently imperviousto the following etch and oxidation steps, e.g. photoresist, oxides,nitrides, etc. Masking layer 150 is then etched, or otherwise removed,to define a diameter or lateral extent for distributed Bragg reflector106. Subsequently, substrate 102 is etched to expose the edge ofdistributed Bragg reflector 106, with the diameter of distributed Braggreflector 106 being larger than the diameter of cladding region 123,active region 126, cladding region 128 and distributed Bragg reflector130 by the thickness of masking layer 150.

After the edges of distributed Bragg reflector 106 are exposed by theabove etching step, the etched wafer is subjected to oxidationenvironment, thereby oxidizing the aluminum found in alternating layers108 of distributed Bragg reflector 106 of VCSEL 101. Stack 108 oxidizespreferentially due to higher aluminum content. Also, the oxidation speedof AlAs is much faster than that of AlGaAs. Only the AlAs layers inalternating layers 108 are oxidized because masking layer 150 protectsany AlAs layers of distributed Bragg reflector 130. Oxidation of thealuminum in VCSEL 101 is achieved by any suitable method, such as steamoxidation, high pressure oxidation, or the like. It should be noted thatprocess parameters are system specific and can range widely from systemto system. For example, oxidation can be carried out at temperaturesranging from 100 degrees Celsius to 700 degrees Celsius, with pressureranging from 0.01 atmosphere to 10 atmospheres. Aluminum arsenide layers111 in distributed Bragg reflector 106 are substantially completelyoxidized, thus their index of refraction drops from approximately 2.9 toa range between 1.3 to 1.7, and nominally to 1.55.

Once the oxidation of layers 111 is completed, masking layer 150 isremoved and distributed Bragg reflector 130 is etched to form a mesa orridge VCSEL (101), as illustrated in FIG. 3. A typical example of thisprocedure is described in U.S. Pat. No. 5,258,316, entitled "PatternedMirror Vertical Cavity Surface Emitting Laser" issued Nov. 2, 1993 andassigned to the same assignee. Broken lines 151 are included in thestructure of FIG. 3, to define the portion of FIG. 3 which isillustrated in FIG. 1. It will of course be understood by those skilledin the art that in some applications the structure illustrated in FIG. 1may be the entire structure and other fabrication methods may beutilized. Upon the completion of the etching to define the mesa, adielectric layer 152 and an electrical contact layer 155 are applied tocomplete VCSEL 101. In this specific embodiment, VCSEL 101 is a topemitting laser so that electrical contact layer 155 is formed to definean emitting window or aperture therethrough. However, many other typesof electrical contacts may be utilized and the present structure isillustrated only for purposes of explanation.

Referring specifically to FIG. 4, a simplified graphical representationis illustrated showing reflectivity versus wavelength for portions ofVCSEL 101. A reflectivity curve 201 is illustrated, having portions 202,203, 204, representative of the reflectivity for distributed Braggreflector 106 of VCSEL 101 with substrate 102 being made of galliumarsenide, with five mirrored pairs of the plurality of alternatinglayers 108 being made of AlAs (Oxidized)/Al₀.5 Ga₀.5 As, and with fivemirrored pairs of the plurality of alternating layers 116 being made of(In₀.49 Al₀.1 Ga₀.41 P/In₀.49 Al₀.51 P). Generally, reflectivity ofdistributed Bragg reflector 106 of VCSEL 101 is illustrated throughoutthe visible spectrum, i.e., 550 nanometers to 900 nanometers. As can beseen by portion 202, reflectivity of distributed Bragg reflector 106sharply increases and exceeds ninety percent at approximately 570nanometers. At approximately, 600 nanometers reflectivity is in excessof 95.0 percent. In general, portion 203 illustrates reflectivity thatis in excess of 99.9 percent that is from 640 nanometers to 840nanometers. Portion 203 illustrates a wide response curve withexceptionally good reflectivity in the visible spectrum. Portion 204illustrates a sharply declining side of the reflectivity curve 201.Thus, making distributed Bragg reflector 106 of VCSEL 101 extremelyeffective for reflecting light 120 that is in the visible spectrum.

While we have shown and described specific embodiments of the presentinvention, further modification and improvement will occur to thoseskilled in the art. We desire it to be understood, therefore, that thisinvention is not limited to the particular forms shown and we intend inthe appended claims to cover all modifications that do not depart fromthe spirit and scope of this invention.

What is claimed is:
 1. A hybrid mirror structure for a visible emittingvertical cavity surface emitting laser comprising:a supporting substratehaving a surface; a first distributed Bragg reflector disposed on thesurface of the supporting substrate, the first distributed Braggreflector having first pairs of alternating layers with one of thealternating layers of each of the first pairs being formed of anoxidized aluminum material and second pairs of alternating layers, withthe first pairs of alternating layers being positioned adjacent thesupporting substrate and the second pairs of alternating layers beingpositioned on the first pairs of alternating layers and cooperating withthe first pairs of alternating layers to provide the first distributedBragg reflector with increased reflectivity; a first cladding regiondisposed on the first distributed Bragg reflector, an active regiondisposed on the first cladding region, and a second cladding regiondisposed on the active region; and a second distributed Bragg reflectordisposed on the second cladding region.
 2. A hybrid mirror structure fora visible emitting vertical cavity surface emitting laser as claimed inclaim 1 where, in the first pairs of alternating layers in the firstdistributed Bragg reflector, each pair of alternating layers includes alayer containing oxidized aluminum.
 3. A hybrid mirror structure for avisible emitting vertical cavity surface emitting laser as claimed inclaim 2 where, in the first pairs of alternating layers in the firstdistributed Bragg reflector, each pair of alternating layers includes alayer containing AlAs having an index of refraction, and Al in the AlAsis oxidized to decrease the index of refraction to a range ofapproximately 1.3 to 1.7.
 4. A hybrid mirror structure for a visibleemitting vertical cavity surface emitting laser as claimed in claim 3where, in the first pairs of alternating layers in the first distributedBragg reflector, each pair of alternating layers further includes alayer containing AlGaAs.
 5. A hybrid mirror structure for a visibleemitting vertical cavity surface emitting laser as claimed in claim 2where, in the second pairs of alternating layers in the firstdistributed Bragg reflector, each pair of alternating layers includes alayer containing InAlGaP.
 6. A hybrid mirror structure for a visibleemitting vertical cavity surface emitting laser as claimed in claim 5where, in the second pairs of alternating layers in the firstdistributed Bragg reflector, each pair of alternating layers includes alayer containing InAlP.
 7. A hybrid mirror structure for a visibleemitting vertical cavity surface emitting laser as claimed in claim 1wherein the first pairs of alternating layers in the first distributedBragg reflector include from one to ten pairs of layers.
 8. .A hybridmirror structure for a visible emitting vertical cavity surface emittinglaser as claimed in claim 7 wherein the first pairs of alternatinglayers in the first distributed Bragg reflector include five pairs oflayers.
 9. A hybrid mirror structure for a visible emitting verticalcavity surface emitting laser as claimed in claim 1 wherein the secondpairs of alternating layers in the first distributed Bragg reflectorinclude from one to ten pairs of layers.
 10. A hybrid mirror structurefor a visible emitting vertical cavity surface emitting laser as claimedin claim 9 wherein the second pairs of alternating layers in the firstdistributed Bragg reflector include five pairs of layers.
 11. A hybridmirror structure for a visible emitting vertical cavity surface emittinglaser comprising:a semiconductor substrate having a surface; a firstdistributed Bragg reflector disposed on the surface of the semiconductorsubstrate, the first distributed Bragg reflector having first pairs ofalternating layers with a first layer in each pair including an oxidizedaluminum arsenide material and a second layer in each pair including analuminum gallium arsenide material, and second pairs of alternatinglayers with each pair including a layer with an InAlGaP material and alayer with an InAlP material, with the second pairs of alternatinglayers being positioned adjacent the first pairs of alternating layersand cooperating with the first pairs of alternating layers to providethe first distributed Bragg reflector with increased reflectivity; afirst cladding region disposed on the first distributed Bragg reflectorincluding an InAlGaP material; an active region disposed on the firstcladding region, the active region having a quantum well layer, a firstbarrier layer and a second barrier layer with the quantum well layerpositioned between the first barrier layer and the second barrier layer;a second cladding region disposed on the active region and including anInAlGaP material; and a second distributed Bragg reflector disposed onthe cladding region, the second distributed Bragg reflector includingpairs of alternating layers with each pair including a layer with anAlAs material and a layer with an AlGaAs material.
 12. A hybrid mirrorstructure for a visible emitting vertical cavity surface emitting laseras claimed in claim 11 where, in the first pairs of alternating layersin the first distributed Bragg reflector, each pair of alternatinglayers includes a layer containing AlAs having an index of refraction,and Al in the AlAs is oxidized to decrease the index of refraction to arange of approximately 1.3 to 1.7.
 13. A hybrid mirror structure for avisible emitting vertical cavity surface emitting laser as claimed inclaim 11 wherein the first pairs of alternating layers in the firstdistributed Bragg reflector include from one to ten pairs of layers. 14.A hybrid mirror structure for a visible emitting vertical cavity surfaceemitting laser as claimed in claim 13 wherein the first pairs ofalternating layers in the first distributed Bragg reflector include fivepairs of layers.
 15. A hybrid mirror structure for a visible emittingvertical cavity surface emitting laser as claimed in claim 11 whereinthe second pairs of alternating layers in the first distributed Braggreflector include from one to ten pairs of layers.
 16. A hybrid mirrorstructure for a visible emitting vertical cavity surface emitting laseras claimed in claim 15 wherein the second pairs of alternating layers inthe first distributed Bragg reflector include five pairs of layers. 17.A method of fabricating a hybrid mirror structure for a visible emittingvertical cavity surface emitting laser comprising the steps of:providinga supporting substrate having a surface; disposing a first distributedBragg reflector on the surface of the supporting substrate, forming thefirst distributed Bragg reflector to include first pairs of alternatinglayers including an aluminum material which is oxidized during themethod of fabricating and second pairs of alternating layers, andpositioning the first pairs of alternating layers adjacent thesupporting substrate and the second pairs of alternating layers on thefirst pairs of alternating layers; disposing a first cladding region onthe first distributed Bragg reflector, an active region on the firstcladding region, and a second cladding region on the active region; anddisposing a second distributed Bragg reflector on the second claddingregion.
 18. A method of fabricating a hybrid mirror structure for avisible emitting vertical cavity surface emitting laser as claimed inclaim 17 wherein the step of disposing the first distributed Braggreflector on the surface of the supporting substrate includes formingeach of the first pairs of alternating layers to include a layer havingan index of refraction and containing oxidized aluminum.
 19. A method offabricating a hybrid mirror structure for a visible emitting verticalcavity surface emitting laser as claimed in claim 18 wherein the step offorming each of the first pairs of alternating layers to include thelayer containing oxidized aluminum further includes oxidizing Al in theAlAs to decrease the index of refraction to a range of approximately 1.3to 1.7.
 20. A method of fabricating a hybrid mirror structure for avisible emitting vertical cavity surface emitting laser as claimed inclaim 17 wherein the step of forming the first distributed Braggreflector to include first pairs of alternating layers includes formingfrom one to ten pairs of layers.
 21. A method of fabricating a hybridmirror structure for a visible emitting vertical cavity surface emittinglaser as claimed in claim 20 wherein the step of forming the firstdistributed Bragg reflector to include first pairs of alternating layersincludes forming five pairs of layers.
 22. A method of fabricating ahybrid mirror structure for a visible emitting vertical cavity surfaceemitting laser as claimed in claim 17 wherein the step of forming thefirst distributed Bragg reflector to include second pairs of alternatinglayers includes forming from one to ten pairs of layers.
 23. A method offabricating a hybrid mirror structure for a visible emitting verticalcavity surface emitting laser as claimed in claim 22 wherein the step offorming the first distributed Bragg reflector to include second pairs ofalternating layers includes forming five pairs of layers.
 24. A methodof fabricating a hybrid mirror structure for a visible emitting verticalcavity surface emitting laser comprising the steps of:providing asupporting substrate having a surface; disposing a first distributedBragg reflector on the surface of the supporting substrate, forming thefirst distributed Bragg reflector to include first pairs of alternatinglayers including an aluminum material and second pairs of alternatinglayers, and positioning the first pairs of alternating layers adjacentthe supporting substrate and the second pairs of alternating layers onthe first pairs of alternating layers; disposing a first cladding regionon the first distributed Bragg reflector, an active region on the firstcladding region, and a second cladding region on the active region;disposing a second distributed Bragg reflector on the second claddingregion; and oxidizing the aluminum material in the first pairs ofalternating layers to decrease an index of refraction of the first pairsof alternating layers to a range of approximately 1.3 to 1.7.